Oct 16, 2011
Fermi-FET Technology Electronics Seminar Report
This is a good Electronics seminar report on Fermi-FET technology. Fermi-FET technology can lead to significant improvement in circuit performance, layout density, power requirements, and manufacturing cost with only a moderate alteration of traditional MOSFET manufacturing technology. This technology makes use of a subtle optimization of traditional buried channel technology to overcome the known shortcomings of buried channel while maintaining large improvements in channel mobility. You can also Subscribe to FINAL YEAR PROJECT'S by Email for more such projects and seminar.
Fermi-FET can optimize both the N-Channel and P-Channel devices with a single gate material, provided the work function is near the mid-range between N and P-type polysilicon. Materials that have been used in MOSFET technology with a suitable work function include Tungsten, Tungsten Silicide, Nickel, Cobalt, Cobalt Silicide, P-type Ge:Si and many others. Use this seminar report for your reference and study only.
Author:Shahar Al Minnath
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